PerkinElmer Optoelectronics has been a designer and manufacturer of industry-leading CCD and CMOS based imaging devices for over 30 years. Today, that legacy continues with our P-series CCD imagers, L-series CMOS imagers, PT-series TDI imagers, and RA-series CCD imagers, featuring a built-in TE cooler.

• RA-Series:cooled CCD-area sensors
  
  
• 1100x330 Pixel Cooled Area Imager

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• P-Series: CDD - line scan sensors (linear arrays)
  
  
• 512, 1024 or 2048 pixels
• standard- or UV-enhanced fused silica window
• 40Mhz output

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• L-Series: CMOS-line scan sensors (linear arrays)
  
  
• 128,256,512 or 1024 pixels 25x2500µm
• 128,256 or 1024 pixel 50x2500µm
• 1 MHz output

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• PT-Series: TDI - line scan sensors (linear arrays)
  
  
• 1024 pixels
• 96 TDI levels
• 20 Mhz output
  

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The RA1133J is a full frame CCD sensor with reset capabilities designed specifically for use in spectroscopy, biomedical imaging and related scientific imaging applications. The package for the array is designed with an integrated two stage thermoelectric cooler. This enables the device to be run 40° C below ambient temperature, -15° C when compared to room temperature. Its combination of very low noise and low dark current make it ideal for low light, high dynamic range and high resolution applications.

The imager is structured with a single output register at one end of the imaging columns. A lateral reset drain is located adjacent to this readout register which enables the dumping of accumulated charge from the array. Two phase clocks are needed to drive the readout register. Three phase clocks are needed to drive imaging cells. The array is available in a 30-pin metal package with an integrated TE cooler.

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In the P-series linear photodiode arrays, PerkinElmer has combined the best features of photodiode array detection and high-speed charge coupled imaging to offer an uncompromising solution to the increasing demands of advanced imaging applications. These high performance imagers feature low noise, high sensitivity, high charge storage capacity, and lag-free dynamic imaging in a convenient single-output architecture. The imagers are a 14µm pixel on a 14µm pitch.
Available in array lengths of 512, 1024, or 2048 pixels, with either low-cost glass or UV-enhanced fused silica windows, these versatile imagers are widely used in high-speed document sorting, mail sorting, production measurement and gauge positioning, spectroscopy, and many other industrial and scientific applications requiring peak imager performance.

• 512, 1024 or 2048 pixels
• 40Mhz single tap output
• available with low-cost glass or UV-enhanced fused silica window
• 14µm x 14µm pixel
• high signal-noise ratio
• high sensitivity
• spectral response: 250-1000nm

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The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high-quality, low-cost solution for spectroscopy and colorimetry applications in the 300-1000nm range. The combination of high sensitivity, low dark current, low switching noise, and high saturation charge of the L-series provides excellent dynamic range and great flexibility in setting integration time.

L-series imagers consist of a linear array of silicon photodiodes, each connected to a MOS switch for readout controlled by an integrated shift register scanning circuit. Under external clock control, the shift register sequentially enables each of the switches directing the charge on the associated photodiode to an output line. A dummy output provides noise cancellation. The L-series devices are mounted in a ceramic side-brazed 22pin dual inline package. Available in 128, 256, 512, or 1024 pixels with 25 or 50µm x 2500µm pixels, the L-series are pin-compatible with earlier PerkinElmer SB and TB series sensors.

• 128,256,512 or 1024 pixels 25µm x 2500µm
• 128,256 or 512 pixels 50 µm x 2500µm
• 40Mhz single tap output
• high signal-noise ratio
• high sensitivity
• spectral response: 300-1000nm

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In the PerkinElmer PT1109AAQ Time Delay and Integration (TDI) imager, PerkinElmer has combined the best features of photodiode array detection and TDI operation to offer an uncompromising solution to the increasing demands of high-speed imaging applications. The PT1109AAQ is a high performance TDI imager, featuring a unqiue 13µm x 13µm square TDI pixel architecture. The chip has 96 stages with 1024 pixels per line, allowing for stable imaging in both fast and low-light applications. Eight extra stages are present at the front-end of the sensor, allowing for adequate dark balancing. Full-well capacity of the sensor is >400,000 electrons, and readout noise (rms) is 70 electrons, allowing for a >5000:1 dynamic range.

The output tap works at a maximum data rate of 20 MHz. Line scan rates reach 18.6 kHz. The sensor incor-porates 4 vertical and 2 horizontal phases. The PT1109AAQ imager boasts a >300V/µj/cm2 sensitivity, as well as a <+/-10% PRNU (across the full array). The PT1109AAQ imager is designed for applications where low light and high speed eliminate the use of standard linear imagers such as semiconductor inspection, wafer inspection, and sorting applications.

• 1024 pixels 13 µm x 13µm
• 96 integration levels
• 20MHz single tap output
• high signal-noise ratio
• high full-well capacity

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